fast switching thyristor atf413 repetitive voltage up to 1200 v mean on-state current 705 a surge current 9 ka target specification turn-off time 12 s mag 06 - issue : 04 symbol characteristic conditions tj [c] value unit blocking v rrm repetitive peak reverse voltage 125 1200 v v rsm non-repetitive peak reverse voltage 125 1300 v v drm repetitive peak off-state voltage 125 1200 v i rrm repetitive peak reverse current v=vrrm 125 75 ma i drm repetitive peak off-state current v=vdrm 125 75 ma conducting i t (av) mean on-state current 180 sin, 50 hz, th=55c, doub le side cooled 705 a i t (av) mean on-state current 180 sin, 1 khz, th=55c, doub le side cooled 565 a i tsm surge on-state current, non repetitive sine wave, 1 0 ms 125 9 ka i2 t i2 t without reverse voltage 405 x1e3 a2s v t on-state voltage on-state current = 1400 a 125 2,46 v v t(to) threshold voltage 125 1,55 v r t on-state slope resistance 125 0,650 mohm switching di/dt critical rate of rise of on-state current, min from 75% vdrm up to 1200 a, gate 10v 5 ohm 125 500 a/ s dv/dt critical rate of rise of off-state voltage, mi n linear ramp up to 70% of vdrm 125 600 v/s td gate controlled delay time, typical vd=100v, gate source 20v, 10 ohm , tr=1 s 25 0,85 s tq circuit commutated turn-off time di/dt = 60 a/s, i= 1000 a i = 1000 a 125 12 s dv/dt = 200 v/s , up to 80% vdrm q rr reverse recovery charge di/dt = 60 a/s, i= 1000 a i = 1000 a 125 80 c i rr peak reverse recovery current vr = 50 v 75 a i h holding current, typical vd=5v, gate open circuit 25 m a i l latching current, typical vd=5v, tp=30s 25 ma gate v gt gate trigger voltage vd=5v 25 3,5 v i gt gate trigger current vd=5v 25 350 ma v gd non-trigger gate voltage, min. vd=vdrm 125 0,25 v v fgm peak gate voltage (forward) 25 30 v i fgm peak gate current 25 10 a v rgm peak gate voltage (reverse) 25 5 v p gm peak gate power dissipation pulse width 100 s 25 150 w p g(av) average gate power dissipation 25 3 w mounting r th(j-h) thermal impedance, dc junction to heatsink, double s ide cooled 37 c/kw t j operating junction temperature -30 / 125 c f mounting force 11.0 / 13.0 kn mass 320 g tq code d 10 s c 12 s b 15 s a 20 s l 25 s ordering information : atf413 s 12 c tq code m 30 s n 35 s p 40 s r 45 s s 50 s standard specification vdrm&vrrm/100 t 60 s u 70 s w 80 s x 100s y 150s poseico spa power semiconductors italian corporation poseico poseico spa via n. lorenzi 8, 16152 genova - italy tel. +39 010 6556234 - fax +39 010 6557519 sales office: tel. +39 010 6556775 - fax +39 010 6445141
atf413 fast switching thyristor target specification mag 06 - issue : 04 cathode terminal type din 46244 - a 4.8 - 0.8 gate terminal type amp 60598 - 1 distributed by on-state characteristic tj = 125 c 0 500 1000 1500 2000 2500 0,6 1,1 1,6 2,1 2,6 on-state voltage [v] on-state current [a] transient thermal impedance double side cooled 0 5 10 15 20 25 30 35 40 0,001 0,01 0,1 1 10 100 t[s] zth j-h [c/kw] surge characteristic tj = 125 c 0 1 2 3 4 5 6 7 8 9 10 1 10 100 n cycles itsm [ka] all the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 m. in the interest of product improvement poseico spa reserves the right to change any data given in this data sheet at any time witho ut previous notice. if not stated otherwise the maximum value of ratings (simbol s over shaded background) and characteristics is reported. poseico spa power semiconductors italian corporation poseico
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